PART |
Description |
Maker |
PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦,860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
PTF10160 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
MRF1000MB MRF1000MB-15 |
Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦,50伏特,脉冲航空电601215兆赫 TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc. Microsemi, Corp. ETC[ETC] List of Unclassifed Manufacturers
|
PTB20101 |
175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
MHL9128D |
MHL9128 800-960 MHz, 1.3 W, 15 V, 20 dB, UHF Linear Amplifier - Archived
|
Motorola
|
SD1496-3 RF621 |
RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
SD1495-3 RF613 SD14950-03 SD14950-3 |
RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS From old datasheet system
|
Microsemi Corporation
|
QPP-006 |
QuikPAC module data. 120W, 925-960 MHz, Class AB power stage.
|
XEMOD
|